HXY MOSFET HC3M0045065K1
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
HC3M0045065K1
Package:
TO-247-4L
Customer #:
Key Attributes:
SICFET N-CH 650V 49A TO-247-4L
Description:
N-Channel 650V 49A Through Hole TO-247-4L
Datasheet:
HXY MOSFET HC3M0045065K1
Products Specifications
Manufacturer:
Package:
TO-247-4L
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
49A
RDS(on):
33mΩ@20V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Pd - Power Dissipation:
242W
Input Capacitance(Ciss):
1.823nF
Output Capacitance(Coss):
190pF
Gate Charge(Qg):
96nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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