HXY MOSFET HSCT20N170
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
HSCT20N170
Package:
TO-247-3L
Customer #:
Key Attributes:
SiC Power MOSFET N-Channel Enhancement Mode
Description:
1.7kV 72A 70mΩ 4V 520W TO-247-3L Single FETs, MOSFETs RoHS
Datasheet:
HXY MOSFET HSCT20N170
Products Specifications
Manufacturer:
Package:
TO-247-3L
Drain to Source Voltage:
1.7kV
Current - Continuous Drain(Id):
72A
Operating Temperature -:
-40℃~+150℃
RDS(on):
70mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
6.7pF
Input Capacitance(Ciss):
3.672nF
Pd - Power Dissipation:
520W
Output Capacitance(Coss):
171pF
Gate Charge(Qg):
188nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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