HXY MOSFET HC1M40120J
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
HC1M40120J
Package:
TO-263-7L
Customer #:
Key Attributes:
SICFET N-CH 1.2kV 65A TO-263-7L
Description:
N-Channel 1.2kV 65A 326W Surface Mount TO-263-7L
Datasheet:
HXY MOSFET HC1M40120J
Products Specifications
Manufacturer:
Package:
TO-263-7L
Configuration:
-
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
65A
RDS(on):
40mΩ@18V
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Output Capacitance(Coss):
125pF
Pd - Power Dissipation:
326W
Input Capacitance(Ciss):
2.766nF
Gate Charge(Qg):
112nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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