GOFORD GT011N03TE
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT011N03TE
Package:
TO-220
Customer #:
Key Attributes:
MOSFET N-CH 30V 209A TO-220
Description:
N-Channel 30V 209A 89W Through Hole TO-220
Datasheet:
GOFORD GT011N03TE
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
209A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.245nF
Output Capacitance(Coss):
2.07nF
Pd - Power Dissipation:
89W
Gate Charge(Qg):
98nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
Recommended Products
GT130N10D3
100V 52A 12.5mΩ@10V 4V@250uA 1 N-channel 71W DFN-8L(3x3) Single FETs, MOSFETs...
Manufacturer: GOFORD
G120N03D32
30V 28A 17mΩ@4.5V 2.2V@250uA 2 N-Channel 20W DFN-8L(3x3) Single FETs, MOSFETs...
Manufacturer: GOFORD