GOFORD G2K2P10D3E
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
G2K2P10D3E
Package:
DFN3x3-8L
Customer #:
Key Attributes:
MOSFET P-CH 100V 10A DFN3x3-8L
Description:
P-Channel 100V 10A 31W Surface Mount DFN3x3-8L
Datasheet:
GOFORD G2K2P10D3E
Products Specifications
Manufacturer:
Package:
DFN3x3-8L
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
230mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 P-Channel
Output Capacitance(Coss):
45pF
Pd - Power Dissipation:
31W
Input Capacitance(Ciss):
1.668nF
Gate Charge(Qg):
33nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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