GOFORD G120N03D32
Manufacturer:
GOFORD
Mfr. Part #:
G120N03D32
Package:
DFN-8L(3x3)
Customer #:
Description:
30V 28A 17mΩ@4.5V 2.2V@250uA 2 N-Channel 20W DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet:
GOFORD G120N03D32
Products Specifications
Manufacturer:
Package:
DFN-8L(3x3)
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF
Number:
2 N-Channel
Input Capacitance(Ciss):
1.089nF
Output Capacitance(Coss):
133pF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
18nC@10V
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
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Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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