GOFORD GT011N03ME
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT011N03ME
Package:
TO-263
Customer #:
Key Attributes:
MOSFET N-CH 30V 209A TO-263
Description:
N-Channel 30V 209A 89W Surface Mount TO-263
Datasheet:
GOFORD GT011N03ME
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
209A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
552pF@15V
Number:
1 N-channel
Output Capacitance(Coss):
2.1nF
Pd - Power Dissipation:
89W
Input Capacitance(Ciss):
6.14nF@15V
Gate Charge(Qg):
98nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
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Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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