GOFORD GT130N10D3
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT130N10D3
Package:
DFN-8L(3x3)
Customer #:
Description:
100V 52A 12.5mΩ@10V 4V@250uA 1 N-channel 71W DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet:
GOFORD GT130N10D3
Products Specifications
Manufacturer:
Package:
DFN-8L(3x3)
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.254nF
Output Capacitance(Coss):
461pF
Pd - Power Dissipation:
71W
Gate Charge(Qg):
18nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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