ANHI ASA65R120EFD
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASA65R120EFD
Package:
TO-220F
Customer #:
Description:
700V 30A 120mΩ@10V,14A 5V@250uA 1 N-channel 36.5W TO-220F Single FETs, MOSFETs RoHS
Datasheet:
ANHI ASA65R120EFD
Products Specifications
Manufacturer:
Package:
TO-220F
Configuration:
Half-Bridge
Drain to Source Voltage:
700V
Current - Continuous Drain(Id):
30A
RDS(on):
120mΩ@10V,14A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
89pF
Pd - Power Dissipation:
36.5W
Input Capacitance(Ciss):
2.657nF
Gate Charge(Qg):
55.4nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
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