ANHI ASU65R1K4E
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASU65R1K4E
Package:
TO-251
Customer #:
Key Attributes:
MOSFET N-CH 655V 4A TO-251
Description:
N-Channel 655V 4A 28W Through Hole TO-251
Datasheet:
ANHI ASU65R1K4E
Products Specifications
Manufacturer:
Package:
TO-251
Drain to Source Voltage:
655V
Current - Continuous Drain(Id):
4A
RDS(on):
1.4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.2pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
238pF
Gate Charge(Qg):
5.76nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 75 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
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