ANHI ASW65R038EFD
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASW65R038EFD
Package:
TO-247
Customer #:
Key Attributes:
MOSFET N-CH 655V 80A TO-247
Description:
N-Channel 655V 80A 500W Through Hole TO-247
Datasheet:
ANHI ASW65R038EFD
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
655V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.1pF
Number:
1 N-channel
Output Capacitance(Coss):
169pF
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
6.033nF
Gate Charge(Qg):
158.2nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
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