ANHI ASB80R750E
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASB80R750E
Package:
TO-263
Customer #:
Key Attributes:
MOSFET N-CH 800V 8.5A TO-263
Description:
N-Channel 800V 8.5A 150W Surface Mount TO-263
Datasheet:
ANHI ASB80R750E
Products Specifications
Manufacturer:
Package:
TO-263
Configuration:
-
Drain to Source Voltage:
800V
Current - Continuous Drain(Id):
8.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.92pF
Number:
1 N-channel
Output Capacitance(Coss):
34.4pF
Input Capacitance(Ciss):
850.8pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
18.5nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
Recommended Products