ANHI ASW60R029EFD
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASW60R029EFD
Package:
TO-247
Customer #:
Key Attributes:
MOSFET N-CH 650V 90A TO-247
Description:
N-Channel 650V 90A 500W Through Hole TO-247
Datasheet:
ANHI ASW60R029EFD
Products Specifications
Manufacturer:
Package:
TO-247
Configuration:
Half-Bridge
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
90A
RDS(on):
29mΩ@10V,28A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.44pF
Number:
1 N-channel
Output Capacitance(Coss):
165.6pF
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
8.001nF
Gate Charge(Qg):
153.3nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
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