onsemi HGTG18N120BND
Manufacturer:
onsemi
Mfr. Part #:
HGTG18N120BND
Package:
TO-247-3
Customer #:
Description:
390W 1.2kV NPT (Non-Punch Through) TO-247-3 Single IGBTs RoHS
Datasheet:
onsemi HGTG18N120BND
Products Specifications
Manufacturer:
Package:
TO-247-3
Pd - Power Dissipation:
390W
Td(off):
170ns
Td(on):
23ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.7V@15V,18A
Gate Charge(Qg):
165nC
Operating Temperature:
-
Reverse Recovery Time(trr):
75ns
Switching Energy(Eoff):
1.8mJ
Turn-On Energy (Eon):
1.9mJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 450 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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