onsemi NGTB50N120FL2WG
Manufacturer:
onsemi
Mfr. Part #:
NGTB50N120FL2WG
Package:
TO-247
Customer #:
Key Attributes:
IGBT - Field Stop II
Description:
267W 1.2kV TO-247 Single IGBTs RoHS
Datasheet:
onsemi NGTB50N120FL2WG
Products Specifications
Manufacturer:
Package:
TO-247
Pd - Power Dissipation:
267W
Td(off):
282ns
Td(on):
118ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
139pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@400uA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
311nC@15V
Reverse Recovery Time(trr):
256ns
Switching Energy(Eoff):
1.4mJ
Turn-On Energy (Eon):
4.4mJ
Input Capacitance(Cies):
7.383nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
233pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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