MASPOWER MSG100T120FQC1
Manufacturer:
MASPOWER
Asian Brands
Mfr. Part #:
MSG100T120FQC1
Package:
TO-247
Customer #:
Description:
882W 1.2kV TO-247 Single IGBTs RoHS
Products Specifications
Manufacturer:
Package:
TO-247
Pd - Power Dissipation:
882W
Td(off):
282ns
Td(on):
34ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
290pF
Input Capacitance(Cies):
4.856nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@2.6mA
Gate Charge(Qg):
370nC@15V
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
505pF
Reverse Recovery Time(trr):
370ns
Switching Energy(Eoff):
2.8mJ
Turn-On Energy (Eon):
6.4mJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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MASPOWER
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Shenzhen Maspower Semiconductor Co., Ltd.
(hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro
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