MASPOWER MS12N120HJC0
Manufacturer:
MASPOWER
Asian Brands
Mfr. Part #:
MS12N120HJC0
Package:
TO-247
Customer #:
Key Attributes:
MOSFET N-CH 1.2kV 12A TO-247
Description:
N-Channel 1.2kV 12A 290W Through Hole TO-247
Datasheet:
MASPOWER MS12N120HJC0
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2Ω@10V
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
3.15nF
Pd - Power Dissipation:
290W
Gate Charge(Qg):
85nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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MASPOWER
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Shenzhen Maspower Semiconductor Co., Ltd.
(hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro
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