MASPOWER MS100N60ICB3
Manufacturer:
MASPOWER
Asian Brands
Mfr. Part #:
MS100N60ICB3
Package:
TO-264
Customer #:
Key Attributes:
MOSFET N-CH 650V 100A TO-264
Description:
650V 100A 33.5mΩ@10V 3.8V 1 N-channel 1.041kW TO-264 Single FETs, MOSFETs RoHS
Datasheet:
MASPOWER MS100N60ICB3
Products Specifications
Manufacturer:
Package:
TO-264
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
100A
RDS(on):
33.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.4pF
Number:
1 N-channel
Pd - Power Dissipation:
1.041kW
Output Capacitance(Coss):
181pF
Input Capacitance(Ciss):
8.395nF
Gate Charge(Qg):
170nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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MASPOWER
255 Products
Shenzhen Maspower Semiconductor Co., Ltd.
(hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro
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