MASPOWER MS60N06HGB0
Manufacturer:
MASPOWER
Asian Brands
Mfr. Part #:
MS60N06HGB0
Package:
TO-3PB
Customer #:
Key Attributes:
MOSFET 60V 60A TO-3PB
Description:
60V 60A 180W Through Hole TO-3PB
Datasheet:
MASPOWER MS60N06HGB0
Products Specifications
Manufacturer:
Package:
TO-3PB
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
60A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
487pF@25V
Number:
-
Input Capacitance(Ciss):
2.7nF@25V
Pd - Power Dissipation:
180W
Gate Charge(Qg):
115nC@15V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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MASPOWER
255 Products
Shenzhen Maspower Semiconductor Co., Ltd.
(hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro
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