MASPOWER MS4N250HGC0 for sale
MASPOWER MS4N250HGC0 for sale

MASPOWER MS4N250HGC0

Manufacturer: MASPOWER Asian Brands
Mfr. Part #: MS4N250HGC0
Package: TO-247
Customer #:
Key Attributes: MOSFET N-CH 2.5kV 4A TO-247
Description: N-Channel 2.5kV 4A 520W Through Hole TO-247
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
2.5kV
Current - Continuous Drain(Id):
4A
RDS(on):
19Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
520W
Input Capacitance(Ciss):
1.54nF
Gate Charge(Qg):
74nC

Additional Information

Type Details
Minimum 1
Multiple 1
Standard Packaging 30
Sales Unit Piece

Compliance & Export Codes

Type Details
RoHS
ECCN -
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

About Product

MASPOWER MS4N250HGC0 MASPOWER MS4N250HGC0 MASPOWER MS4N250HGC0 MASPOWER MS4N250HGC0 MASPOWER MS4N250HGC0
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MASPOWER
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Authorised Brand Asian Brand
Shenzhen Maspower Semiconductor Co., Ltd. (hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro