MASPOWER MS66N85IDB3 for sale
MASPOWER MS66N85IDB3 for sale

MASPOWER MS66N85IDB3

Manufacturer: MASPOWER Asian Brands
Mfr. Part #: MS66N85IDB3
Package: TO-264
Customer #:
Key Attributes: MOSFET N-CH 850V 66A TO-264
Description: N-Channel 850V 66A 1250W Through Hole TO-264
Products Specifications
Manufacturer:
Package:
TO-264
Drain to Source Voltage:
850V
Current - Continuous Drain(Id):
66A
RDS(on):
83mΩ@15V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Output Capacitance(Coss):
8.5nF
Input Capacitance(Ciss):
8.6nF
Pd - Power Dissipation:
1.25kW
Gate Charge(Qg):
220nC@10V

Additional Information

Type Details
Minimum 1
Multiple 1
Standard Packaging 25
Sales Unit Piece

Compliance & Export Codes

Type Details
RoHS
ECCN -
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

About Product

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MASPOWER
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Authorised Brand Asian Brand
Shenzhen Maspower Semiconductor Co., Ltd. (hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro