LONTEN LNN04R050
Manufacturer:
LONTEN
Asian Brands
Mfr. Part #:
LNN04R050
Package:
DFN5x6-8
Customer #:
Key Attributes:
MOSFET N-CH 40V 80A DFN5x6-8
Description:
N-Channel 40V 80A 54W Surface Mount DFN5x6-8
Datasheet:
LONTEN LNN04R050
Products Specifications
Manufacturer:
Package:
DFN5x6-8
Drain to Source Voltage:
40V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
338.5pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
23.6pF@20V
Pd - Power Dissipation:
54W
Gate Charge(Qg):
66.7nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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LONTEN
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Lonten Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development, and has established a domestic first-class R&D center and application testing laboratory. The company has passed ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application.
The company has established a domestic first-class R&D center and laboratory. The company's super junction power FET (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other products have the advantages of high energy efficiency, high reliability and high cost performance. It has been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; in new energy vehicle char
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