LONTEN LSF65R180GT
Manufacturer:
LONTEN
Asian Brands
Mfr. Part #:
LSF65R180GT
Package:
TO-262-3
Customer #:
Key Attributes:
MOSFET N-CH 650V 20A TO-262-3
Description:
N-Channel 650V 20A Through Hole TO-262-3
Datasheet:
LONTEN LSF65R180GT
Products Specifications
Manufacturer:
Package:
TO-262-3
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@0.25mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.15pF
Number:
1 N-channel
Output Capacitance(Coss):
68.6pF
Input Capacitance(Ciss):
1.748nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
39nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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LONTEN
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Lonten Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development, and has established a domestic first-class R&D center and application testing laboratory. The company has passed ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application.
The company has established a domestic first-class R&D center and laboratory. The company's super junction power FET (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other products have the advantages of high energy efficiency, high reliability and high cost performance. It has been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; in new energy vehicle char
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