JIAENSEMI JNG10T65DJS1
Manufacturer:
JIAENSEMI
Asian Brands
Mfr. Part #:
JNG10T65DJS1
Package:
TO-252-2L
Customer #:
Description:
100W 650V TO-252-2L Single IGBTs RoHS
Datasheet:
JIAENSEMI JNG10T65DJS1
Products Specifications
Manufacturer:
Package:
TO-252-2L
Pd - Power Dissipation:
100W
Td(off):
71ns
Td(on):
12ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
10pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@250uA
Gate Charge(Qg):
28nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
57ns
Switching Energy(Eoff):
170uJ
Turn-On Energy (Eon):
180uJ
Input Capacitance(Cies):
670pF
Pulsed Current- Forward(Ifm):
30A
Output Capacitance(Coes):
37pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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