HXY MOSFET HC3M0016120D
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
HC3M0016120D
Package:
TO-247-3L
Customer #:
Key Attributes:
SICFET 1.2kV 115A TO-247-3L
Description:
1.2kV 115A 556W Through Hole TO-247-3L
Datasheet:
HXY MOSFET HC3M0016120D
Products Specifications
Manufacturer:
Package:
TO-247-3L
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
115A
Operating Temperature -:
-40℃~+175℃
RDS(on):
22.3mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
13pF
Output Capacitance(Coss):
230pF
Input Capacitance(Ciss):
6.085nF
Pd - Power Dissipation:
556W
Gate Charge(Qg):
207nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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