YANGJIE MG35P12E1A
Manufacturer:
YANGJIE
Asian Brands
Mfr. Part #:
MG35P12E1A
Package:
Through Hole,107.5x45mm
Customer #:
Key Attributes:
IGBT 1.2kV 35A E1A
Description:
IGBT 1.2kV 35A 227W E1A
Datasheet:
YANGJIE MG35P12E1A
Products Specifications
Manufacturer:
Package:
Through Hole,107.5x45mm
Td(off):
141ns
Pd - Power Dissipation:
227W
Td(on):
20ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
2.5nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@1.2mA
Gate Charge(Qg):
0.27uC
Switching Energy(Eoff):
1.95mJ
Turn-On Energy (Eon):
4.45mJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 8 |
| Sales Unit | Piece |
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YANGJIE
2348 Products
Yangzhou Yangjie Elec Tech was founded in 2000 and is located in Yangzhou. It is a vertically integrated (IDM) manufacturer that combines semiconductor discrete device chip design and manufacturing, device packaging and testing, and end-to-end sales and services. The main product lines include MOSFETs, IGBTs, SiC-related products, rectifiers, protection devices, small signal devices, and integrated circuits.
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