VBsemi Elec SiA444DJT-T1-GE3-VB
Manufacturer:
VBsemi Elec
Asian Brands
Mfr. Part #:
SiA444DJT-T1-GE3-VB
Package:
DFN-6(2x2)
Customer #:
Key Attributes:
MOSFET N-CH 30V 6A DFN-6(2x2)
Description:
N-Channel 30V 6A 1.3W Surface Mount DFN-6(2x2)
Datasheet:
VBsemi Elec SiA444DJT-T1-GE3-VB
Products Specifications
Manufacturer:
Package:
DFN-6(2x2)
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@10V;27mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA;2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
424pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
4.2nC@10V;8.2nC@15V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
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VBsemi Elec
192 Products
VBsemi Elec was established in 2012 and is a company based in Taiwan, China, focusing on the research, development, production, and sales of MOSFET power semiconductor components. It has obtained multiple product invention patents and has been certified with ISO14001, QS9000, and ISO9001. The company primarily produces MOSFET power semiconductor components.
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