ST STGB19NC60KDT4
Manufacturer:
ST
Mfr. Part #:
STGB19NC60KDT4
Package:
D2PAK
Customer #:
Key Attributes:
IGBT 600V 35A D2PAK
Description:
IGBT 600V 35A 125W Surface Mount D2PAK
Datasheet:
ST STGB19NC60KDT4
Products Specifications
Manufacturer:
Package:
D2PAK
Td(off):
105ns
Pd - Power Dissipation:
125W
Td(on):
30ns
Operating Temperature:
-55℃~+150℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
28pF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.75V@15V,12A
Gate Charge(Qg):
55nC
Reverse Recovery Time(trr):
31ns
Switching Energy(Eoff):
255uJ
Turn-On Energy (Eon):
165uJ
Input Capacitance(Cies):
1.17nF
Pulsed Current- Forward(Ifm):
50A
Output Capacitance(Coes):
127pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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