ST STGWA40H65DFB
Manufacturer:
ST
Mfr. Part #:
STGWA40H65DFB
Package:
TO-247
Customer #:
Key Attributes:
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Description:
283W 650V FS (Field Stop) TO-247 Single IGBTs RoHS
Datasheet:
ST STGWA40H65DFB
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
142ns
Pd - Power Dissipation:
283W
Operating Temperature:
-55℃~+175℃
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
107pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
210nC@15V
Reverse Recovery Time(trr):
62ns
Switching Energy(Eoff):
363uJ
Turn-On Energy (Eon):
498uJ
Input Capacitance(Cies):
5.412nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
198pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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