ST STGD6M65DF2
Manufacturer:
ST
Mfr. Part #:
STGD6M65DF2
Package:
TO-252
Customer #:
Description:
88W 650V FS (Field Stop) TO-252 Single IGBTs RoHS
Datasheet:
ST STGD6M65DF2
Products Specifications
Manufacturer:
Package:
TO-252
Td(off):
90ns
Pd - Power Dissipation:
88W
Td(on):
15ns
Operating Temperature:
-55℃~+175℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@250uA
Gate Charge(Qg):
21.2nC
Reverse Recovery Time(trr):
140ns
Switching Energy(Eoff):
200uJ
Turn-On Energy (Eon):
36uJ
Input Capacitance(Cies):
-
Pulsed Current- Forward(Ifm):
24A
Output Capacitance(Coes):
31pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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