Samwin SWB036R10E8S
Manufacturer:
Samwin
Asian Brands
Mfr. Part #:
SWB036R10E8S
Package:
TO-263
Customer #:
Key Attributes:
MOSFET 100V 175A TO-263
Description:
100V 175A 312.5W Surface Mount TO-263
Datasheet:
Samwin SWB036R10E8S
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
175A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
19pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
312.5W
Input Capacitance(Ciss):
6.263nF@50V
Gate Charge(Qg):
85nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
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Samwin
157 Products
Samwin electronic technology co., LTD. (Samwin technology for short) was founded in 2008, headquartered in Xi 'an high-tech zone Huanpu science and technology industrial park, with a research and development center in Shanghai, Shenzhen with a sales and service center, but also with a Taiwan office and Hong Kong import and export business center. Is a collection of research and development, production and sales as one of the high-tech enterprises, products include: medium and high power field effect tube (MOSFET, low to high voltage full series products), insulated gate bipolar transistor (IGBT), diode (including rapid recovery diode and Schottky diode), bridge stack and power management IC, etc..
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