Samwin SWJ7N65D
Manufacturer:
Samwin
Asian Brands
Mfr. Part #:
SWJ7N65D
Package:
TO-262N
Customer #:
Key Attributes:
MOSFET 650V 7A TO-262N
Description:
650V 7A 208.3W TO-262N
Datasheet:
Samwin SWJ7N65D
Products Specifications
Manufacturer:
Package:
TO-262N
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.23nF
Pd - Power Dissipation:
208.3W
Gate Charge(Qg):
30nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
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Samwin
157 Products
Samwin electronic technology co., LTD. (Samwin technology for short) was founded in 2008, headquartered in Xi 'an high-tech zone Huanpu science and technology industrial park, with a research and development center in Shanghai, Shenzhen with a sales and service center, but also with a Taiwan office and Hong Kong import and export business center. Is a collection of research and development, production and sales as one of the high-tech enterprises, products include: medium and high power field effect tube (MOSFET, low to high voltage full series products), insulated gate bipolar transistor (IGBT), diode (including rapid recovery diode and Schottky diode), bridge stack and power management IC, etc..
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