Samwin SW4N65
Manufacturer:
Samwin
Asian Brands
Mfr. Part #:
SW4N65
Package:
TO-220
Customer #:
Key Attributes:
MOSFET N-CH 650V 4A TO-220
Description:
N-Channel 650V 4A 23W Through Hole TO-220
Datasheet:
Samwin SW4N65
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
69pF
Input Capacitance(Ciss):
758pF
Pd - Power Dissipation:
23W
Gate Charge(Qg):
18nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
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Samwin
157 Products
Samwin electronic technology co., LTD. (Samwin technology for short) was founded in 2008, headquartered in Xi 'an high-tech zone Huanpu science and technology industrial park, with a research and development center in Shanghai, Shenzhen with a sales and service center, but also with a Taiwan office and Hong Kong import and export business center. Is a collection of research and development, production and sales as one of the high-tech enterprises, products include: medium and high power field effect tube (MOSFET, low to high voltage full series products), insulated gate bipolar transistor (IGBT), diode (including rapid recovery diode and Schottky diode), bridge stack and power management IC, etc..
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