Samwin SWB062R08E8T
Manufacturer:
Samwin
Asian Brands
Mfr. Part #:
SWB062R08E8T
Package:
TO-263
Customer #:
Description:
80V 125A 5.9mΩ@10V,30A 2V 201.6W TO-263 Single FETs, MOSFETs RoHS
Datasheet:
Samwin SWB062R08E8T
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
80V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.9mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
315pF@40V
Pd - Power Dissipation:
201.6W
Input Capacitance(Ciss):
6.743nF@40V
Gate Charge(Qg):
137nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
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Samwin
157 Products
Samwin electronic technology co., LTD. (Samwin technology for short) was founded in 2008, headquartered in Xi 'an high-tech zone Huanpu science and technology industrial park, with a research and development center in Shanghai, Shenzhen with a sales and service center, but also with a Taiwan office and Hong Kong import and export business center. Is a collection of research and development, production and sales as one of the high-tech enterprises, products include: medium and high power field effect tube (MOSFET, low to high voltage full series products), insulated gate bipolar transistor (IGBT), diode (including rapid recovery diode and Schottky diode), bridge stack and power management IC, etc..
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