onsemi HGT1S14N41G3VLS
Manufacturer:
onsemi
Mfr. Part #:
HGT1S14N41G3VLS
Package:
TO-263AB
Customer #:
Description:
445V TO-263AB Single IGBTs
Datasheet:
onsemi HGT1S14N41G3VLS
Products Specifications
Manufacturer:
Package:
TO-263AB
Pd - Power Dissipation:
-
Collector-Emitter Breakdown Voltage (Vces):
445V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
26nC
Operating Temperature:
-55℃~+175℃@(Tj)
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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