onsemi HGT1S12N60C3DS
Manufacturer:
onsemi
Mfr. Part #:
HGT1S12N60C3DS
Package:
TO-263AB
Customer #:
Description:
104W 600V TO-263AB Single IGBTs
Datasheet:
onsemi HGT1S12N60C3DS
Products Specifications
Manufacturer:
Package:
TO-263AB
Pd - Power Dissipation:
104W
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
71nC
Operating Temperature:
-40℃~+150℃@(Tj)
Reverse Recovery Time(trr):
32ns
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
Recommended Products