onsemi HGT1S20N36G3VLS
Manufacturer:
onsemi
Mfr. Part #:
HGT1S20N36G3VLS
Package:
TO-263AB
Customer #:
Description:
415V TO-263AB Single IGBTs RoHS
Datasheet:
onsemi HGT1S20N36G3VLS
Products Specifications
Manufacturer:
Package:
TO-263AB
Td(off):
-
Pd - Power Dissipation:
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
415V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
28.7nC
Operating Temperature:
-40℃~+175℃@(Tj)
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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