onsemi HGTP10N120BN
Manufacturer:
onsemi
Mfr. Part #:
HGTP10N120BN
Package:
TO-220AB
Customer #:
Key Attributes:
IGBT 1.2kV 35A TO-220AB
Description:
IGBT NPT (Non-Punch Through) 1.2kV 35A 298W Through Hole TO-220AB
Datasheet:
onsemi HGTP10N120BN
Products Specifications
Manufacturer:
Package:
TO-220AB
Td(off):
165ns
Pd - Power Dissipation:
298W
Td(on):
23ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
-
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6V@90uA
Gate Charge(Qg):
100nC
Operating Temperature:
-55℃~+150℃
Switching Energy(Eoff):
800uJ
Turn-On Energy (Eon):
320uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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