MASPOWER MSG50T120QLB3
Manufacturer:
MASPOWER
Asian Brands
Mfr. Part #:
MSG50T120QLB3
Package:
TO-264
Customer #:
Description:
521W 1.2kV TO-264 Single IGBTs RoHS
Products Specifications
Manufacturer:
Package:
TO-264
Pd - Power Dissipation:
521W
Td(off):
162ns
Td(on):
13ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
230pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
340nC@15V
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
390pF
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.4mJ
Turn-On Energy (Eon):
2.8mJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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MASPOWER
255 Products
Shenzhen Maspower Semiconductor Co., Ltd.
(hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro
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