MASPOWER MSG20T120HLE0
Manufacturer:
MASPOWER
Asian Brands
Mfr. Part #:
MSG20T120HLE0
Package:
TO-263
Customer #:
Description:
227W 1.2kV FS (Field Stop) TO-263 Single IGBTs RoHS
Datasheet:
MASPOWER MSG20T120HLE0
Products Specifications
Manufacturer:
Package:
TO-263
Td(off):
230ns
Pd - Power Dissipation:
227W
Td(on):
100ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
100pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@250uA
Gate Charge(Qg):
160nC@15V
Reverse Recovery Time(trr):
240ns
Switching Energy(Eoff):
1.5mJ
Turn-On Energy (Eon):
2.4mJ
Input Capacitance(Cies):
4.67nF
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
232pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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MASPOWER
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Shenzhen Maspower Semiconductor Co., Ltd.
(hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro
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