LONTEN LSGE06R046HWB
Manufacturer:
LONTEN
Asian Brands
Mfr. Part #:
LSGE06R046HWB
Package:
TO-263
Customer #:
Key Attributes:
MOSFET N-CH 60V 104A TO-263
Description:
N-Channel 60V 104A 89W Surface Mount TO-263
Datasheet:
LONTEN LSGE06R046HWB
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
104A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
67pF@30V
Number:
-
Input Capacitance(Ciss):
3.511nF@30V
Pd - Power Dissipation:
89W
Gate Charge(Qg):
48nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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LONTEN
37 Products
Lonten Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development, and has established a domestic first-class R&D center and application testing laboratory. The company has passed ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application.
The company has established a domestic first-class R&D center and laboratory. The company's super junction power FET (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other products have the advantages of high energy efficiency, high reliability and high cost performance. It has been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; in new energy vehicle char
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