LONTEN LSD80R2K8GT
Manufacturer:
LONTEN
Asian Brands
Mfr. Part #:
LSD80R2K8GT
Package:
TO-220MF
Customer #:
Key Attributes:
MOSFET N-CH 800V 2A TO-220MF
Description:
N-Channel 800V 2A 34.2W Through Hole TO-220MF
Datasheet:
LONTEN LSD80R2K8GT
Products Specifications
Manufacturer:
Package:
TO-220MF
Drain to Source Voltage:
800V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2Ω@10V
Gate Threshold Voltage (Vgs(th)):
4.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.47pF
Number:
1 N-channel
Output Capacitance(Coss):
8.78pF
Input Capacitance(Ciss):
238pF
Pd - Power Dissipation:
34.2W
Gate Charge(Qg):
7.7nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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LONTEN
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Lonten Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development, and has established a domestic first-class R&D center and application testing laboratory. The company has passed ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application.
The company has established a domestic first-class R&D center and laboratory. The company's super junction power FET (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other products have the advantages of high energy efficiency, high reliability and high cost performance. It has been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; in new energy vehicle char
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