LONTEN LSDN55R140GT
Manufacturer:
LONTEN
Mfr. Part #:
LSDN55R140GT
Package:
TO-220F-3
Customer #:
Description:
550V 23A 140mΩ@10V 3.5V@0.25mA 34W TO-220F-3 Single FETs, MOSFETs RoHS
Datasheet:
LONTEN LSDN55R140GT
Products Specifications
Manufacturer:
Package:
TO-220F-3
Drain to Source Voltage:
550V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@0.25mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
-
Output Capacitance(Coss):
76.2pF
Input Capacitance(Ciss):
1.73nF
Pd - Power Dissipation:
34W
Gate Charge(Qg):
40nC@10V
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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LONTEN
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Lonten Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development, and has established a domestic first-class R&D center and application testing laboratory. The company has passed ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application.
The company has established a domestic first-class R&D center and laboratory. The company's super junction power FET (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other products have the advantages of high energy efficiency, high reliability and high cost performance. It has been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; in new energy vehicle char
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