LGE LGE3M18120Q
Manufacturer:
LGE
Asian Brands
Mfr. Part #:
LGE3M18120Q
Package:
TO-247-4
Customer #:
Key Attributes:
Silicon Carbide Power MOSFET
Description:
1.2kV 105A 3.8V 428W TO-247-4 Single FETs, MOSFETs RoHS
Datasheet:
LGE LGE3M18120Q
Products Specifications
Manufacturer:
Package:
TO-247-4
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.8V
Reverse Transfer Capacitance (Crss@Vds):
10pF
Input Capacitance(Ciss):
4.8nF
Pd - Power Dissipation:
428W
Output Capacitance(Coss):
225pF
Gate Charge(Qg):
235nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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LGE
1887 Products
Luguang Electronic Technology Co.,Ltd.
(hereinafter referred to as "LGE") was established in 2002, it is a national high-tech enterprises of discrete semiconductor design, manufacture and sell. With more than 21 years’ experience in engineering and manufacturing, LGE offers a full range of TVS diodes, zener diodes, Schottky diodes, silicon rectifiers and fast recovery rectifiers etc , which are exported to more than 100 countries and widely used in automotive electronics, consumer devices, intelligent manufacturing, security, industry and other fields. LGE’s production facility is fully compliant to current automotive and environmental standards such as IATF16949:2016, ISO9001:2015 and ISO14001:2015. All LGE products are fully compliant to the latest RoHS directive and the major products are UL certified. More than hundreds of products are compatible to ST、Vishay、Onsemi、NXP、ROHM etc. To serve worldwide customers better, LGE sets up branch offices and authorizes distributors in Europe,
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