JIAENSEMI JNG50T65HJU1
Manufacturer:
JIAENSEMI
Asian Brands
Mfr. Part #:
JNG50T65HJU1
Package:
TO-247
Customer #:
Description:
535W 650V TO-247 Single IGBTs RoHS
Datasheet:
JIAENSEMI JNG50T65HJU1
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
193ns
Pd - Power Dissipation:
535W
Td(on):
52ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
37pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
158nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
82ns
Switching Energy(Eoff):
1mJ
Turn-On Energy (Eon):
1.7mJ
Input Capacitance(Cies):
4.82nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
170pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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