Infineon DF80R12W2H3FB11
Manufacturer:
Infineon
Mfr. Part #:
DF80R12W2H3FB11
Package:
Through Hole,62.8x56.7mm
Customer #:
Description:
IGBT 1.2kV 20A 20mW Through Hole,62.8x56.7mm
Datasheet:
Infineon DF80R12W2H3FB11
Products Specifications
Manufacturer:
Package:
Through Hole,62.8x56.7mm
Td(off):
250ns
Pd - Power Dissipation:
20mW
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.13nF
Input Capacitance(Cies):
2.35nF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1.00mA
Gate Charge(Qg):
0.32uC
Operating Temperature:
-40℃~+150℃@(Tj)
Pulsed Current- Forward(Ifm):
450A
Switching Energy(Eoff):
800uJ
Turn-On Energy (Eon):
260uJ
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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Infineon
9502 Products
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
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