HXY MOSFET IXYH120N65B3-HXY
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
IXYH120N65B3-HXY
Package:
TO-247
Customer #:
Description:
429W 650V TO-247 Single IGBTs RoHS
Datasheet:
HXY MOSFET IXYH120N65B3-HXY
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
195ns
Pd - Power Dissipation:
429W
Td(on):
27ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
26pF
Input Capacitance(Cies):
3.452nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@0.88mA
Gate Charge(Qg):
156nC@15V
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
223pF
Reverse Recovery Time(trr):
123ns
Switching Energy(Eoff):
1.65mJ
Turn-On Energy (Eon):
3.3mJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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