HXY MOSFET APT50GT120B2RDQ2G-HXY
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
APT50GT120B2RDQ2G-HXY
Package:
TO-247P
Customer #:
Description:
600W 1.2kV TO-247P Single IGBTs RoHS
Datasheet:
HXY MOSFET APT50GT120B2RDQ2G-HXY
Products Specifications
Manufacturer:
Package:
TO-247P
Td(off):
216ns
Pd - Power Dissipation:
600W
Td(on):
55ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
42pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
200nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
380ns
Switching Energy(Eoff):
1.8mJ
Turn-On Energy (Eon):
2.65mJ
Input Capacitance(Cies):
6.42nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
195pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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