HXY MOSFET IKY75N120CH3XKSA1-HXY
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
IKY75N120CH3XKSA1-HXY
Package:
TO-247P-4L
Customer #:
Description:
930W 1.2kV TO-247P-4L Single IGBTs RoHS
Datasheet:
HXY MOSFET IKY75N120CH3XKSA1-HXY
Products Specifications
Manufacturer:
Package:
TO-247P-4L
Td(off):
188ns
Pd - Power Dissipation:
930W
Td(on):
63ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
65pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@2.6mA
Gate Charge(Qg):
307nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
366ns
Switching Energy(Eoff):
3mJ
Turn-On Energy (Eon):
3.9mJ
Input Capacitance(Cies):
9.883nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
274pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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