HXY MOSFET IKQ140N120CH7XKSA1-HXY
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
IKQ140N120CH7XKSA1-HXY
Package:
TO-247P
Customer #:
Description:
1.091kW 1.2kV TO-247P Single IGBTs RoHS
Datasheet:
HXY MOSFET IKQ140N120CH7XKSA1-HXY
Products Specifications
Manufacturer:
Package:
TO-247P
Td(off):
359ns
Pd - Power Dissipation:
1.091kW
Td(on):
183ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
59.4pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.17V@2.24mA
Gate Charge(Qg):
473nC
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
137ns
Switching Energy(Eoff):
8.9mJ
Turn-On Energy (Eon):
11.9mJ
Input Capacitance(Cies):
16.191nF
Pulsed Current- Forward(Ifm):
560A
Output Capacitance(Coes):
407pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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